By Hao Yu, Yang Shang
Along with a number of possibilities in verbal exchange and imaging purposes, the layout of rising millimeter-wave (mm-wave) and terahertz (THz) digital circuits and platforms in CMOS expertise faces new demanding situations and calls for new units. Design of CMOS Millimeter-Wave and Terahertz built-in Circuits with Metamaterials provides substitute suggestions utilizing CMOS on-chip metamaterials. not like traditional metamaterial units on published circuit forums (PCBs), the provided CMOS metamaterials can be used to construct many mm-wave and THz circuits and structures on chip.
Leveraging the authors’ vast services and event with CMOS on-chip metamaterials, this ebook indicates that with using metamaterials, you may discover coherent THz sign new release, amplification, transmission, and detection of phase-arrayed CMOS transistors with considerably more advantageous functionality. providing specified assurance from equipment to method, the booklet hereby:
- Describes built-in circuit layout with software of metamaterials in CMOS technology
- Includes genuine CMOS built-in circuit examples and chip demonstrations with size results
- Evaluates novel mm-wave and THz verbal exchange and imaging structures lower than CMOS-based system-on-chip integration
Design of CMOS Millimeter-Wave and Terahertz built-in Circuits with Metamaterials reflects the newest learn growth and offers a state of the art reference on CMOS-based metamaterial units and mm-wave and THz systems.
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Extra info for Design of CMOS millimeter-wave and terahertz integrated circuits with metamaterials
17), the FTR depends on the tunability of the lumped component itself(∆Pe /PR and ∆PL /PL ). Conventional RH T-line is mostly tuned by varactor and capacitor bank, where the tuning range is limited by the parasitic capacitance from transistors and constraint tuning ability of varactor and capacitor bank in millimeter-wave region. CRLH T-line, on the other hand, provides more choices of tunable elements such as inductiveloaded transformer  and avoids the effect of parasitic capacitance. As will be explained in Chapter 5, a much wider tuning range can be achieved.
13) 28 Design of CMOS Millimeter-Wave and Terahertz Integrated Circuits ω = (−θ Lp Cs )−1 . 15) (PL )− 2 . ∂PL 2θ The frequency tuning range (FTR) with CRLH T-line operating in nonlinear LH region can then be estimated as F T RLH = ∆ω ∆PL 1 ∂ω × ∆PL = . 16) Similarly, the FTR with traditional RH T-line can be estimated as F T RRH ≈ ∆PR . 17), the FTR depends on the tunability of the lumped component itself(∆Pe /PR and ∆PL /PL ). Conventional RH T-line is mostly tuned by varactor and capacitor bank, where the tuning range is limited by the parasitic capacitance from transistors and constraint tuning ability of varactor and capacitor bank in millimeter-wave region.
The circuit behaves similarly to the traditional RH T-line. 5) the signal doesn’t propagate. The T-line operates in the band-gap region, where the phase contributions from LH and RH components cancel each other. A zero-phase can thus be realized to replace traditional RH λ/2 T-line with much more compact area and low loss. 2. The relationship between β and frequency ω defines the dispersion diagram. Note here a lossless system is assumed. If lossy components are introduced, β cannot stay 0 in the band-gap region, and α can never became 0.