By Frank Hartmann
This informative monograph describes the technological evolution of silicon detectors and their influence on excessive- strength particle physics. the writer right here marshals his personal first-hand adventure within the improvement and likewise the belief of the DELPHI, CDF II and the CMS monitoring detector. the fundamental rules of small strip- and pixel-detectors are offered and in addition the ultimate large-scale functions. The Evolution of Silicon Detector expertise acquaints readers with the manifold demanding situations concerning the layout of sensors and pushing this expertise to the bounds. The specialist will locate severe info that's thus far in simple terms to be had in quite a few slide presentation scattered over the area broad net. This functional advent of silicon sensor expertise and its day after day existence within the lab additionally deals many examples to demonstrate difficulties and their ideas over a number of detector generations.
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Extra info for Evolution of Silicon Sensor Technology in Particle Physics
10 on page 14). The applied voltage also influences the collection time of the ionized electron–hole pairs, which furthermore defines the time of lateral diffusion. The diffusion determines the cluster size of the signal, see discussion on page 22. A deviation of depletion voltage behaviour for segmented devices is briefly presented in Sect. 3. Another criterion for a large silicon vertex detector is the ability to apply one single Vbias , therefore VFD ∝ D2 · Ne f f should not vary over the individual sensors.
Cd (strip length) is illustrated in Fig. 22. 6 Sensor Parameters All parameters have to be tailored, specified in detail, validated and monitored according to their specific need, which will be discussed in the following sections. Certain interdependencies must be balanced to achieve best results. In the following, 30 1 Basic Principles of a Silicon Detector geometric structures are discussed, including their effects on the functionality like bias and guard ring, implant and Al together with p+ strip widths and thickness.
By measuring the values for every single strip, quality control can approximate the load uniformity of the preamplifier. Strip Capacitance (Cstrip = Cd ) Cd = Cint + Cb includes all capacitances of a readout strip including inter-strip capacitances and strip to backplane capacitance. It reflects the total capacitance load 20 21 Without full bias voltage, only the capacitance to the plane of the SCR would be measured. Known as a “pinhole” (see Sect. 3). 6 Sensor Parameters 39 to the chip amplifier.